1 cmos logic ic ELM7S32B 2-input or gate elm7s 3 2 b - el a b c general description ELM7S32B is cmos 2-input or gate ic. it realizes high speed operation similar to ls-ttl with lower power consumption by cmos features. the inner circuit structure of 3-stage logic gate obtains wider noise immunity and constant output. features application selection guide ELM7S32B-el symbol a function 32: 2-input or gate b product version b c taping direction el: refer to pkg file maximum absolute ratings parameter symbol limit unit power supply voltage vdd -0.5 to +7.0 v input voltage vin -0.5 to vdd+0.5 v output voltage vout -0.5 to vdd+0.5 v input protection diode current iik 20 ma output parasitic diode current iok 20 ma output current iout 25 ma vdd/gnd current idd, ignd 25 ma power dissipation pd 200 mw storage temperature tstg -65 to +150 c ? cell phones ? digital cameras ? portable electrical appliances like pda, etc. ? computers and peripherals ? digital electrical appliances like lcd tv sets, dvd recorders/players, stb, etc. ? modi?cation inside print board, adjustment of timing, solution to noise ? same electrical characteristic as 74hc series (output current is around 1/2 of 74hc series) ? low consumption current : idd=1.0a(max.)(top=25 c) ? wide power voltage range : 2.0v to 6.0v ? high speed : tpd=5ns(typ.)(vdd=5.0v) ? symmetrical output impedance : | ioh |=iol=2ma(min.)(vdd=4.5v) ? small package : sot-25 3 -
2 pin con?guration sot-25(top view) ac electrical characteristics cl=15pf, tr=tf=6ns, vdd=5v cl=50pf, tr=tf=6ns * cpd is ic's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit. averaged operating current consumption at non load is calculated as following formula: idd(opr)=cpd ? vdd ? fin+idd suggested operating condition parameter symbol limit unit power voltage vdd 2.0 to 6.0 v input voltage vin 0 to vdd v output voltage vout 0 to vdd v operating temperature top -40 to +85 c high-input down-time tr, tf vdd=2.0v 0 to 1000 ns vdd=4.5v 0 to 500 vdd=6.0v 0 to 400 pin no. pin name 1 inb 2 ina 3 gnd 4 outx 5 vdd input output ina inb outx low low low low high high high low high high high high parameter sym. top=25c unit condition min. typ. max. output transition time ttlh 4 10 ns refer to test circuit tthl 4 10 propagation delay-time tplh 5 15 ns refer to test circuit tphl 5 15 parameter sym. vdd top=25c top=-40 to +85c unit condition min. typ. max. min. max. output transition time ttlh 2.0 22 125 155 ns refer to test circuit 4.5 7 25 31 6.0 6 21 26 tthl 2.0 18 125 155 ns 4.5 6 25 31 6.0 6 21 26 propagation delay-time tplh 2.0 17 100 125 ns refer to test circuit 4.5 7 20 25 6.0 6 17 21 tphl 2.0 18 100 125 ns 4.5 8 20 25 6.0 7 17 21 input capacity cin 5 10 10 pf equivalent inner capacity cpd 10 pf 3 - cmos logic ic ELM7S32B 2-input or gate 1 2 3 5 4
3 cmos logic ic ELM7S32B 2-input or gate dc electrical characteristics test circuit measured wave pattern marking a b c * output should be opened when measuring current consumption. sot-25 sym. mark content a e elm7s series b 4 ELM7S32B c a to z (except i, o, x) lot no. parameter sym. vdd top=25c top=-40 to +85c unit condition min. typ. max. min. max. input voltage vih 2.0 1.50 1.50 v 4.5 3.15 3.15 6.0 4.20 4.20 vil 2.0 0.50 0.50 v 4.5 1.35 1.35 6.0 1.80 1.80 output voltage voh 2.0 1.90 2.00 1.90 v vin= vih or vil ioh=-20a 4.5 4.40 4.50 4.40 6.0 5.90 6.00 5.90 4.5 4.18 4.36 4.13 ioh=-2ma 6.0 5.68 5.83 5.63 ioh=-2.6ma vol 2.0 0.00 0.10 0.10 v vin=vil iol=20a 4.5 0.00 0.10 0.10 6.0 0.00 0.10 0.10 4.5 0.12 0.26 0.33 iol=2ma 6.0 0.16 0.26 0.33 iol=2.6ma input current iin 6.0 -0.1 0.1 -1.0 1.0 a vin=vdd or gnd static current idd 6.0 1.0 10.0 a vin=vdd or gnd 3 - p u l s e o s c i l l a t o r v d d i n p u t o u t p u t c l 5 0 ? 5 0 % 5 0 % 1 0 % g n d v o h v o l o u t p u t t p h l t p l h 1 0 % v d d i n p u t 5 0 % 5 0 % 9 0 % 9 0 % 6 n s 6 n s 1 0 % 1 0 % 9 0 % 9 0 % t t l h t t h l
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